STP80NF10 数据手册
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ST(B,P)80NF10 14 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: STMicroelectronics STP80NF10
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 300W
- Total Gate Charge (Qg@Vgs): 182nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 5500pF@25V
- Continuous Drain Current (Id): 80A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 15mΩ@10V,40A
- Package: TO-220
- Manufacturer: STMicroelectronics
- Series: STripFET™ II
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 182nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
- Base Part Number: STP80N